@article{li_volatile_2025,
	title = {Volatile and non-volatile nano-electromechanical switches fabricated in a {CMOS}-compatible silicon-on-insulator foundry process},
	volume = {11},
	issn = {2055-7434},
	url = {https://www.nature.com/articles/s41378-025-00964-w},
	doi = {10.1038/s41378-025-00964-w},
	abstract = {Abstract
            
              Nanoelectromechanical ({NEM}) switches have the advantages of zero leakage current, abrupt switching characteristics, and harsh environmental capabilities. This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important. However, to make {NEM}-based logic circuits commercially viable, {NEM} switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities, which remains a big challenge. Here, we demonstrate the use of a commercial silicon-on-insulator ({SOI}) foundry platform (
              {iSiPP}50G
              by {IMEC}, Belgium) to implement monolithically integrated silicon (Si) {NEM} switches. Using this {SOI} foundry platform featuring sub-200 nm lithography technology, we implemented two different types of {NEM} switches: (1) a volatile 3-terminal (3-T) {NEM} switch with a low actuation voltage of 5.6 V and (2) a bi-stable 7-terminal (7-T) {NEM} switch, featuring either volatile or non-volatile switching behavior, depending on the switch contact design. The experimental results presented here show how an established {CMOS}-compatible {SOI} foundry process can be utilized to realize highly integrated Si {NEM} switches, removing a significant barrier towards scalable manufacturing of high performance and high-density {NEM}-based programmable logic circuits and non-volatile memories.},
	pages = {140},
	number = {1},
	journaltitle = {Microsystems \& Nanoengineering},
	shortjournal = {Microsyst Nanoeng},
	author = {Li, Yingying and Bleiker, Simon J. and Worsey, Elliott and Dagon, Maël and Edinger, Pierre and Takabayashi, Alain Yuji and Quack, Niels and Verheyen, Peter and Bogaerts, Wim and Gylfason, Kristinn B. and Pamunuwa, Dinesh and Niklaus, Frank},
	urldate = {2025-08-11},
	date = {2025-07-11},
	langid = {english},
}