%0 Journal Article %T Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process %V 11 %N 1 %P 140 %W https://hdl.handle.net/1983/8584cd2f-4e84-401e-9e25-a1a32b899b6a %U https://www.nature.com/articles/s41378-025-00964-w %X Abstract Nanoelectromechanical (NEM) switches have the advantages of zero leakage current, abrupt switching characteristics, and harsh environmental capabilities. This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important. However, to make NEM-based logic circuits commercially viable, NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities, which remains a big challenge. Here, we demonstrate the use of a commercial silicon-on-insulator (SOI) foundry platform ( iSiPP50G by IMEC, Belgium) to implement monolithically integrated silicon (Si) NEM switches. Using this SOI foundry platform featuring sub-200 nm lithography technology, we implemented two different types of NEM switches: (1) a volatile 3-terminal (3-T) NEM switch with a low actuation voltage of 5.6 V and (2) a bi-stable 7-terminal (7-T) NEM switch, featuring either volatile or non-volatile switching behavior, depending on the switch contact design. The experimental results presented here show how an established CMOS-compatible SOI foundry process can be utilized to realize highly integrated Si NEM switches, removing a significant barrier towards scalable manufacturing of high performance and high-density NEM-based programmable logic circuits and non-volatile memories. %G en %J Microsystems & Nanoengineering %A Li, Yingying %A Bleiker, Simon J. %A Worsey, Elliott %A Dagon, Maël %A Edinger, Pierre %A Takabayashi, Alain Yuji %A Quack, Niels %A Verheyen, Peter %A Bogaerts, Wim %A Gylfason, Kristinn B. %A Pamunuwa, Dinesh %A Niklaus, Frank %D 2025-07-11