@article{liCMOScompatibleHeterogeneous3D2026,
	title = {A {CMOS}-compatible heterogeneous 3-{D} integration platform for silicon nanoelectromechanical switches},
	issn = {1558-0563},
	url = {https://ieeexplore.ieee.org/document/11357953},
	doi = {10.1109/LED.2026.3655495},
	abstract = {Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.},
	urldate = {2026-02-06},
	journal = {IEEE Electron Device Letters},
	author = {Li, Yingying and Bleiker, Simon J. and Worsey, Elliott and Kulsreshath, Mukesh Kumar and Tang, Qi and Reich, Christian and Ernst, Stefan and Raja, Shyamprasad N. and Djuphammar, August and Gylfason, Kristinn B. and Pamunuwa, Dinesh and Niklaus, Frank},
	year = {2026},
	keywords = {Foundries, Integrated circuit interconnections, Metals, NEM computing, NEM memory, Nanoelectromechanical switch, Nanoelectromechanical systems, Optical switches, Routing, Silicon, Silicon compounds, Substrates, Three-dimensional displays, heterogeneous 3-D integration, publication},
	pages = {1--1},
}