%0 Journal Article
%T A CMOS-compatible heterogeneous 3-D integration platform for silicon nanoelectromechanical switches
%P 1-1
%W https://hdl.handle.net/1983/8a9c9480-b9af-4a23-a1a6-9977cbd1a14f
%U https://ieeexplore.ieee.org/document/11357953
%X Nanoelectromechanical (NEM) switches have near vertical turn-off transient, zero off-state leakage, and non-volatile behavior, ideal qualities for low power computing and memory applications. To realize this potential, large-scale integration of NEM switches is required. Here we introduce a three-dimensional (3-D) heterogeneous integration platform that leverages a standard silicon-on-insulator (SOI) CMOS foundry process, combined with post-processing of the foundry wafers to integrate silicon NEM switches. Within this platform, we seamlessly integrated both volatile 3-terminal (3-T) and non-volatile 7-terminal (7-T) NEM switches. We demonstrate successful electrical programming and reprogramming of both switch types, validating the platform’s functionality and its potential for constructing densely integrated NEM switch-based logic circuits and non-volatile memories.
%J IEEE Electron Device Letters
%A Li, Yingying
%A Bleiker, Simon J.
%A Worsey, Elliott
%A Kulsreshath, Mukesh Kumar
%A Tang, Qi
%A Reich, Christian
%A Ernst, Stefan
%A Raja, Shyamprasad N.
%A Djuphammar, August
%A Gylfason, Kristinn B.
%A Pamunuwa, Dinesh
%A Niklaus, Frank
%D 2026
%K Foundries
Integrated circuit interconnections
Metals
NEM computing
NEM memory
Nanoelectromechanical switch
Nanoelectromechanical systems
Optical switches
Routing
Silicon
Silicon compounds
Substrates
Three-dimensional displays
heterogeneous 3-D integration
publication