This workshop will explain how our silicon NEM Switch technology has the potential to create low power chips for extreme temperatures (0K-350C) or high radiation ( to 10 Mrad). Our NEM switches comprise tiny silicon beams that are actuated electrostatically, and can implement efficient logic circuits as well as non-volatile memory, and be seamlessly integrated with CMOS.

The workshop will cover applications areas where NEM switch technology offers transformational potential, manufacturing methods, design techniques, functional testing and reliability evaluation.

We will share details of how we achieve high-density single-chip implementation of NEMS and CMOS using advanced 3-D integration methods, and how circuits and systems can be designed using a custom process design kit.

Some case studies comprising NEM prototype circuits for edge applications [DP1] will be discussed, including opportunities for reducing device count compared to CMOS. Results from functional testing and reliability evaluation including shock and vibration testing will be presented.